Drift-Diffusion Modelling of Four-Junction InGaP/InGaAs/SiGeSn/Ge Solar Cells
2022 IEEE 49th Photovoltaics Specialists Conference (PVSC)（2022）
关键词
absolute efficiency gains,composition space,drift-diffusion modelling,external quantum efficiency,four-junction devices,four-junction material system,industry standard lattice,InGaP-InGaAs-SiGeSn-Ge/int,power conversion efficiencies,quality limits,Shockley-Read-Hall recombination lifetime,solar spectrum,surface recombination velocities,time 1.0 mus
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