Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs曹荣幸,汪柯佳, 孟洋,李林欢,赵琳,韩丹,刘洋,郑澍,李红霞,蒋煜琪,曾祥华,薛玉雄Chinese Physics B（2023）引用 0|浏览11暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
