Neutron and Total Ionizing Dose Irradiation Hardened LDO
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)(2022)
摘要
A hardened LDO for dual-irradiation environment utilization, neutron and total ionizing dose (TID) irradiation, is proposed, fabricated, and testified. Comparison is made between BJT and MOSFET to find the most suitable device for the hardening design.The basic strategy is to focus on the hardening of the three core parts, the bandgap, the error amplifier, and the NLDMOS, in the circuit. The hardened LDO is fabricated using 180 nm BCD process. The neutron irradiation experiment is performed using CFBR-II reactor. The dose is 1.2×10 12 n/cm -2 . The TID irradiation experiment is performed using 60 Co at 50 rad(Si)/s, up to 300 krad(Si).
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关键词
BCD process,BJT,CFBR-II reactor,dual-irradiation environment utilization,hardening design,MOSFET,neutron irradiation,size 180.0 nm,TID irradiation,total ionizing dose irradiation hardened LDO
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