Properties of Percolation Channels in Planar Memristive Structures Based on Epitaxial Films of YBa2Cu3O7 − Δ and La1 − Хsrхmno3 − Δ Oxide Perovskite Compounds

An investigation is performed of planar memristive structures to validate the choice of their basic materials, study their functional properties, and determine and develop the structure the resistive switching mechanism. Mesoscopic heterostructures based on epitaxial 〈001〉 oriented films of high-temperature superconductor YBa2Cu3O7 − δ and doped manganite La1 − xSrxMnO3 − δ, are obtained, and the properties of the percolation channels of structures based on these compounds are studied. Self-adaptive electroforming effects in microcontact heterostructures based on epitaxial manganite films are studied. Numerical calculations using the critical electric field model show there is self-electroformation in strong electric fields, and a gap structure that provides resistive switching reproducibility forms in the zone of contact.