Consideration on the Extrapolation of the Low Insulator Field TDDB in 4H-Sic Power MOSFETs

P. Fiorenza,F. Cordiano,S. M. Alessandrino,A. Russo,E. Zanetti,M. Saggio,C. Bongiorno,F. Giannazzo,F. Roccaforte

2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS（2023）

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Key words
4H-SiC MOSFETs,TDDB,accurate insulator field determination
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