Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness
IEEE Transactions on Electron Devices（2023）
Key words
Back-end-of-the-line (BEOL) compatible process,ferroelectricity improvement,Hf1-xZrxO2 thickness (tHZO) scaling,HZO reliability,interfacial layer (IL) engineering,operation voltage scaling
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