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Graded-interfaces Modeling of Record-Performance Mid and Long-Wave Infrared Quantum Cascade Lasers

Novel In-Plane Semiconductor Lasers XXII(2023)

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摘要
Accurate nonequilibrium Green’s-functions simulations of record-performance 4.9 µm- and 8.3 µm-emitting QCLs, employing Photon-Induced Carrier Transport (PICT), require inclusion of graded interfaces when calculating Interface-Roughness (IFR) scattering. Matching threshold-current densities and V-I characteristics, all IFR parameters were extracted. The root-mean-square height and in-plane correlation length are found to be higher and lower, respectively, than when assuming abrupt interfaces. Abrupt-interfaces’ modeled 4.9 µm-emitting QCLs lack PICT action, which reduces the calculated maximum wall-plug efficiency, η(wp,max), value from 27% to 18.7%. Abrupt-interfaces’ modeled 8.3 µm-emitting QCLs have approximately 70% higher relative leakage-current density, which reduces the calculated η(wp,max) value from 17% to 11.7%.
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关键词
Infrared Laser Absorption
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