Silicon Carbide Power Devices: Progress and Future Outlook
IEEE Journal of Emerging and Selected Topics in Power Electronics（2023）
关键词
4H-silicon carbide (SiC),Baliga short-circuit improvement concept (BaSIC) topology,Baliga’s figure-of-merit (BFOM),bidirectional field effect transistor (BiDFET),JBSFET,junction-barrier-Schottky (JBS) diode,monolithic reverse blocking transistor (MRBT),MOSFET,planar-gate,short-circuit (SC) capability,trench-gate
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