Circular Ferroelectric Tunnel Junctions for the Improvement of Memory Window and Endurance
JAPANESE JOURNAL OF APPLIED PHYSICS(2023)
摘要
Abstract A circular ferroelectric tunnel junction (C-FTJ) is proposed for a larger memory window and better endurance than a conventional planar FTJ (P-FTJ). The electrical characteristics of the proposed C-FTJ are evaluated compared with a conventional P-FTJ by using device simulation. It is confirmed that C-FTJs have more excellent ferroelectric switching than P-FTJs because the electric field becomes more concentrated across the ferroelectric layer. Also, C-FTJs show better endurance because the electric field applied to the interfacial layer is alleviated.
更多查看译文
关键词
Thin Film Ferroelectrics,Ferroelectricity
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要