Using dedicated device arrays for the characterization of TDDB in a scaled HK/MG technology

The impact of Time-Dependent Dielectric Breakdown (TDDB) on scaled technologies' reliability has regained interest in the last years. Due to the stochastic nature of TDDB, its characterization must be performed in a statistically-significant manner, i.e., involving a large number of devices. In this paper we present an array fabricated in a 28 nm, HK/MG commercial technology that contains more than 30,000 test devices. We demonstrate its adequacy for the study of TDDB through several tests, including TDDB stress on NMOS and PMOS devices biased in inversion and accumulation modes.