Properties of High to Ultrahigh Si-doped GaN Grown at 550 C by Flow Modulated Metalorganic Chemical Vapor DepositionVineeta R. Muthuraj,Caroline E. Reilly,Thomas Mates,Shuji Nakamura,Steven P. DenBaars,Stacia KellerApplied physics letters（2023）引用 0|浏览27暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
