Radiation of high-energy electrons when channeling in the bent silicon and germanium monocrystals
St. Petersburg Polytechnical University Journal: Physics and Mathematics(2023)
摘要
In the paper, the simulation results on propagation of high-energy charged par-ticles in the bent crystalline (Si and Ge) media have been presented within the atomistic approach. The calculation results were compared with literary experimental data obtained by measuring the output angular distribution of 855 MeV electrons with their very low initial di-vergence. Moreover, the literary experimental data on output radiation spectra for short bent Si and Ge crystals with different bending radii were taken into account. A good agreement between all the results was found.
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关键词
ultrarelativistic electron,bent monocrystal,silicon,germanium,channeling,radiation when electrons channeling
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