Parasitic Masking Effect in GaN SA-MOVPE Using SiO2 Masks Deposited by the PECVD Technique

The paper reports a phenomenon of parasitic substrate masking during selective area metalorganic vapor phase epitaxy (SA-MOVPE) of gallium nitride (GaN) using silicon dioxide (SiO2) masks deposited by plasma enhanced chemical vapor deposition (PECVD) at pressures above 150 hPa. The discussion of the thermal stability and nitridation process of the SiO2 films is followed by the presentation of the experimental work results focused on the investigation of the relationship between the parasitic masking effect and pressure in the MOVPE reactor chamber. Analysis of the surface morphology is conducted using scanning electron microscopy (SEM) and atomic force microscopy (AFM). A hypothesis was proposed explaining the formation of the deposition-free region that indicates silanimine (HNSi) layer formation as a possible factor responsible for the adverse inhibition of GaN nucleation.