Top-down Patterning of Topological Surface and Edge States Using a Focused Ion Beam

Abdulhakim Bake,Qi Zhang,Cong Son Ho,Grace L. Causer,Weiyao Zhao,Zengji Yue,Alexander Nguyen,Golrokh Akhgar,Julie Karel,David Mitchell,Zeljko Pastuovic, Roger Lewis,Jared H. Cole,Mitchell Nancarrow,Nagarajan Valanoor,Xiaolin Wang,David Cortie

NATURE COMMUNICATIONS（2023）

Institute for Superconducting and Electronic Materials (ISEM) | The Australian Research Council Centre for Excellence in Future Low Energy Electronics Technologies | Chemical and Quantum Physics | Physics Department | Institute of Photonic Chips | Electron Microscopy Centre | The Australian Nuclear Science and Technology Organisation (ANSTO) | School of Physics

Cited 3|Views28

Abstract

The conducting boundary states of topological insulators appear at an interface where the characteristic invariant ℤ2 switches from 1 to 0. These states offer prospects for quantum electronics; however, a method is needed to spatially-control ℤ2 to pattern conducting channels. It is shown that modifying Sb2Te3 single-crystal surfaces with an ion beam switches the topological insulator into an amorphous state exhibiting negligible bulk and surface conductivity. This is attributed to a transition from ℤ2 = 1 → ℤ2 = 0 at a threshold disorder strength. This observation is supported by density functional theory and model Hamiltonian calculations. Here we show that this ion-beam treatment allows for inverse lithography to pattern arrays of topological surfaces, edges and corners which are the building blocks of topological electronics.

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Key words

Design,synthesis and processing,Surface patterning,Topological insulators,Science,Humanities and Social Sciences,multidisciplinary

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