Towards the understanding of the Ti/Al ratio role in solid-state reaction for ohmic contacts on n-GaN

S. Guillemin,S. Messaoudene,P. Gergaud,J. Biscarrat, P. Roulet,N. Bernier,R. Templier, R. Souil, X. Zucchi,Ph. Rodriguez

Materials Science in Semiconductor Processing（2023）

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关键词
GaN,Ohmic contacts to n-GaN,Solid-state reactions,Ti/Al stack,Review,Power Electronics
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