Influence of the temperature and substrate modification on the formation of continuous GaSb film on Si(111) by solid phase epitaxy

S. V. Chusovitina,E. Y. Subbotin,E. A. Chusovitin,D. L. Goroshko,S. A. Dotsenko,S. A. Pyachin,A. V. Gerasimenko,A. K. Gutakovskii

JAPANESE JOURNAL OF APPLIED PHYSICS（2023）

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关键词

GaSb,Si(111),epitaxy,LEED patterns,raman spectra,XRD data,AFM images

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