Significance of Organic Ferroelectric in Harnessing Transient Negative Capacitance Effect at Low Voltage over Oxide Ferroelectric

The concept of leveraging the transient negative capacitance (TNC) effect in a ferroelectric (FE) is a relatively new addition to the field of nanoelectronics. Until now, there has been no comparison of organic and oxide FE-based metal-FE-metal (MFM) devices in harnessing the TNC effect. As a result, we introduce an external resistor-MFM(R-MFM) series circuit to investigate the role of organic and oxide FEs in harnessing the TNC effect at low supply voltages. The multidomain Ginzburg-Landau-Khalatnikov theory is used to model the FE materials in a technology computer-aided design environment. We show that: (i) organic FE-based R-MFM series circuit can harness the TNC effect at just 1 V whereas an oxide FE-based R-MFM series circuit cannot; (ii) the coercivity of an organic FE is 77.39% lower than its counterpart, oxide FE; (iii) the remanent polarization of an organic MFM (1.2$\mu$C/cm 2 ) is very close to the channel charge density of a CMOS transistor (1.6$\mu$C/cm 2 ) making it helpful in addressing capacitance matching issues in NC transistor; (iv) an organic FE-based R-MFM series circuit dissipates 78.89% less energy than an oxide FE-based R-MFM series circuit; (v) the TNC effect and time are justified by its dependence on R. Finally, this article suggests that an organic FE-based MFM could be used as a gate stack of any transistor to achieve sub-60 mV/decade switching energy, making it ideal for ultra-low voltage NC transistors.