GaN Field Emitter Arrays with J_A of 10 A/cm² at V_GE=50 V for Power Applications

III-Nitrides are attractive as field emission devices for high frequency, high power, and harsh environment applications. A wet-based digital etching and a novel device geometry was used to demonstrate GaN vertical self-aligned-gate (SAG) field emitter arrays (FEA) with uniform tips of sub-10 nm tip radius. The best GaN FEA has a current density (J(A)) of 10 A/cm(2) at V-GE = 50 V, which is better than the state-of-the-art Si field emitter arrays at the same bias condition.