Influence of AlGaN N-Type Doping and AlN Thickness on the Two-Dimensional Electron Gas Density (ns) and Resistance (R2DEG)

C. Piotrowicz,B. Mohamad,N. Malbert,M. -A Jaud,W. Vandendaele,M. Charles,R. Gwoziecki

SOLID-STATE ELECTRONICS（2023）

引用 1|浏览23

暂无评分

摘要

•AlNpolarization is attenuated for very thin layers.•n-Doped AlGaN improves the on-state resistance due to the formation of a conductive electron channelin the AlGaN layer.•Low impact of AlGaN n-doping on the 2DEG density.

查看译文

关键词

AlGaN/AlN/GaN heterostructure,2DEG,AlN spacer,n-dopedAlGaN,Schrödinger-Poisson simulations,Measurements

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要