Fowler–Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications
IEEE Transactions on Electron Devices（2023）
关键词
Anode hole injection,buried-channel-array transistor (BCAT),cryogenic,dynamic random access memory (DRAM) cell,Fowler–Nordheim (FN) stress,hole trapping,interface trap
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