Study on the Influence of Parasitic Parameters on the Switching Characteristics and High Frequency Oscillation of SiC MOSFET

Compared with silicon-based switching devices, silicon carbide (SiC) MOSFET has higher temperature and pressure resistance levels, switching speeds and lower switching losses, it has huge application prospects in electric vehicles and power conversion controllers. However, because of extremely high switching speed, under the effect of parasitic parameters, the problem of voltage and current spike oscillations is more prominent, which will adversely affect the efficient and safe operation of devices and power electronic devices. This paper will study the influence of parasitic parameters on the switching oscillation of SiC MOSFET. Based on the analysis of the mechanism of voltage and current spikes in the switching process of SiC MOSFET, a double pulse test circuit is used to simulate the influence of parasitic parameters on the switching oscillation.