Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets.
H.-B. Jo, I.-G. Lee, J.-M. Baek,S. T. Lee,S.-M. Choi,H.-J. Kim,H.-S. Jeong,W.-S. Park,J.-H. Yoo,H.-Y. Lee, D. Y. Yun,SW. Son,D.-H. Ko,Tae-Woo Kim,H.-M. Kwon,S.-K. Kim,Jun-Gyu Kim,J. Yun,T. Kim,J. H. Lee,J.-H. Lee, C.-S. Shin, K.-S. Seo,Dae-Hyun Kim Symposium on VLSI Technology (VLSI Technology)（2022）
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