A 4K–400K Wide Operating-Temperature-Range MRAM Technology with Ultrathin Composite Free Layer and Magnesium Spacer

Ming-Chun Hong,Yao-Jen Chang,Yu-Chen Hsin, Liang-Ming Liu,Kuan-Ming Chen,Yi-Hui Su,Guan-Long Chen,Shan-Yi Yang,I-Jung Wang,Sk. Ziaur Rahaman,Hsin-Han Lee,Shih-Ching Chiu,Chen-Yi Shih,Chih-Yao Wang,Fang-Ming Chen,Jeng-Hua Wei,Shyh-Shyuan Sheu,Wei-Chung Lo, Minn-Tsong Lin,Chih-I Wu,Tuo-Hung Hou

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)（2022）

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MRAM technology,ultrathin composite free layer,quantum computing,automotive electronics,breakdown voltage,switching current,thermal stability,magnetoresistance ratio,reliability,magnetic multilayer,magnetic anisotropy,time 10.0 ns,time 10.0 year,temperature 300.0 K,temperature 4.0 K to 400.0 K,size 1.4 nm,CoFeB-Mg

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