Suppressing Undesired Channel Length‐Dependent Electrical Characteristics of Fully Integrated InGaZnO Thin‐Film Transistors Via Defect Control Layer

Kyung Min Kim,Jeong Suk Yang,Hyung Tae Kim,Inhyo Han, Sang-Hoon Jung,Joon-Young Yang,Yong Min Ha,Soo Young Yoon,Hyun Jae Kim

Advanced electronic materials（2022）

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关键词
back channel,channel length dependency,copper wet etching,InGaZnO,interface engineering
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