Design of Dual-Direction SCR With High Holding Voltage for High Voltage ESD Protection

2022 International EOS/ESD Symposium on Design and System (IEDS)（2022）

引用 0|浏览1

暂无评分

摘要

An improved dual-direction silicon-controlled rectifier (IDDSCR) for high-voltage electrostatic discharge (ESD) protection applications has been proposed and verified in a $0.18\ \mu m$ standard BCD process. Measured TLP results illustrated that the proposed IDDSCR has a high holding voltage of 29.81V and has good latch-up immunity.

查看译文

关键词

dual-direction silicon-controlled rectifier,TLP,holding voltage

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要