Electric-Magnetic-Thermal Co-simulation Method for SiC Gate Turn-off Thyristor Module
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)(2022)
摘要
A new electric-magnetic-thermal co-simulation method is proposed to optimize the design of SiC GTO module. The proposed co-simulation is a transient method with multiple time scale, which mainly includes software PSpice, ANSYS Q3D and COMSOL. The results show that packaging parasitic parameters adversely affect switching characteristics of SiC GTO. As a result, the junction temperature and case temperature are increased in comparison with no parasitic parameter. When heat dissipation is water cooling, the junction temperature and case temperature rise with gradually declined rising rate until steady temperature of 81°C and 41°C. With air-cooled heat dissipation, the temperature presents approximately linear rise, but the temperature of solder joint exceeds the melting point of Sn-3.5Ag solder (221°C) from 7.3s so that module failure happens.
更多查看译文
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要