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Effect of Overlap Region for Schottky Metal and Field Oxide on the Electrical Characteristics of 6500 V/50A 4H-Sic JBS Diodes

Xiping Niu,Ling Sang,Yunlai An,Peifei Wu,Wenting Zhang,Rui Liu,Zechen Du,Chenmeng Li,Xiaoguang Wei,Fei Yang

JOURNAL OF CRYSTAL GROWTH（2023）

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Key words
A1,4H-SiC,A2,JBS,A3,Diodes,B1,Overlap region,B2,Field oxide,B3,Reverse breakdown voltage
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