Structural evaluation of GaAs1−xBix obtained by solid-phase epitaxial growth of amorphous GaAs1−xBix thin films deposited on (0 0 1) GaAs substrates

Osamu Ueda,Noriaki Ikenaga,Yukihiro Horita,Yuto Takagaki,Fumitaka Nishiyama,Mitsuki Yukimune,Fumitaro Ishikawa,Yoriko Tominaga

Journal of Crystal Growth（2023）

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摘要

•GaAs1-xBix was successfully grown by SPE at 600 °C.•GaAs1-xBix epitaxial and poly-crystalline layers were formed by SPE at 350 °C.•As-precipitates, GaAsBi- and Bi-precipitates were generated by SPE at 350 °C.•SPE at 600 °C formed an epitaxial layer, generating GaAsBi- and Bi-precipitates.•Novel features of precipitates were obtained in annealed LTG-GaAsBi crystals.

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关键词

A1. Characterization,A1. Defects,A1. Segregation,A3. Molecular Beam Epitaxy,B2. Semiconductor ternary compounds

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