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Lg = 50 Nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts

In-Geun Lee,Hyeon-Bhin Jo,Ji-Min Baek,Sang-Tae Lee,Su-Min Choi,Hyo-Jin Kim,Wan-Soo Park,Ji-Hoon Yoo,Dae-Hong Ko,Tae-Woo Kim,Sang-Kuk Kim,Jae-Gyu Kim,Jacob Yun,Ted Kim,Jung-Hee Lee,Chan-Soo Shin,Jae-Hak Lee,Kwang-Seok Seo,Dae-Hyun Kim

Electronics（2022）

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关键词
InGaAs,Gate-All-Around (GAA),nanosheet (NS),selective regrowth
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