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Electronic and Excitonic Properties of MSi2Z4 Monolayers

Tomasz Wozniak, Paulo E. Umm-e-hani, Paulo Faria S. Junior,Muhammad B. Ramzan,Agnieszka Kuc

SMALL(2023)

Wroclaw Univ Sci & Technol | Jacobs Univ Bremen | Univ Regensburg

Cited 17|Views45
Abstract
MA(2)Z(4) monolayers form a new class of hexagonal non-centrosymmetric materials hosting extraordinary spin-valley physics. While only two compounds (MoSi2N4 and WSi2N4) are recently synthesized, theory predicts interesting (opto)electronic properties of a whole new family of such two-dimensional (2D) materials. Here, the chemical trends of band gaps and spin-orbit splittings of bands in selected MSi(2)Z(4) (M = Mo, W; Z = N, P, As, Sb) compounds are studied from first-principles. Effective Bethe-Salpeter-equation-based calculations reveal high exciton binding energies. Evolution of excitonic energies under external magnetic field is predicted by providing their effective g-factors and diamagnetic coefficients, which can be directly compared to experimental values. In particular, large positive g-factors are predicted for excitons involving higher conduction bands. In view of these predictions, MSi(2)Z(4) monolayers yield a new platform to study excitons and are attractive for optoelectronic devices, also in the form of heterostructures. In addition, a spin-orbit induced bands inversion is observed in the heaviest studied compound, WSi2Sb4, a hallmark of its topological nature.
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2D MA(2)Z(4) materials,density functional theory,excitons,g-factors,model Bethe-Salpeter equation
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要点】:本文研究了MSi2 Z4单层化合物的电子和激子性质,发现它们具有非常有趣的自旋-谷物理学特性,并对它们在光电子器件中的应用具有潜在价值。

方法】:采用第一性原理计算方法,研究了选择的MSi2 Z4 (M = Mo, W; Z = N, P, As, Sb) 化合物的带隙和自旋轨道分裂程度的化学趋势。并且进行了有效的贝特-萨尔彼特方程计算,揭示了高激子结合能。

实验】:通过提供有效的g因子和抗磁系数,预测了外加磁场下激子能级的演化,并且可以直接与实验值进行比较。特别地,预测了涉及更高导带的激子具有较大的正g因子。在实验部分,发现了WSi2 Sb4中自旋轨道诱导的能带反转,标志着其拓扑性质。