A Resistance Detection Device for Microelectronic Semiconductors: from Signal Detection to Fusion Analysis

A simplified fabrication process of aluminum gate MOS semiconductor devices was designed, and a biodetection silicon chip sensor based on the principle of surface electric field effect was successfully fabricated with 6 masks. Different image transformation methods with different characteristics are combined in series to obtain the hybrid multi-resolution decomposition of the image, and further construct the hybrid multi-resolution analysis image fusion framework. The SiO2-Si3N4 composite gate dielectric layer and the depletion-mode device structure are used to enhance the identification and detection sensitivity of the device.