37.1: Invited Paper: Nanosheet High Mobility SnO2‐SnO Complementary TFTs for System‐on‐Display and Monolithic Three‐Dimensional Integrated Circuit

The top‐gate 4.5‐nm‐thick SnO2 nanosheet nTFT has the high 136 cm2/Vs field‐effect mobility (μFE), sharp 1.5×108 on‐current/off‐current (ION/IOFF), and fast turn‐on subthreshold slope (SS) of 108 mV/decade. The top‐gate 7‐nm‐thick nanosheet SnO pTFT has a high μFE of 4.4 cm2/Vs, large ION/IOFF of 1.2×105, and SS of 526 mV/decade. These CTFTs will enable the system‐on‐panel (SoP) and Monolithic Three‐Dimensional (3D) Integrated Circuit (IC).