A Physics Based MTJ Compact Model for State-of-the-Art and Emerging STT-MRAM Failure Analysis and Yield Enhancement
2022 IEEE International Memory Workshop (IMW)（2022）
关键词
intrinsic device characterization,transient behavior,thermal noise,Monte-Carlo simulations,technology specific fitting parameters,state-of-the-art high performance MTJ stack,MTJ compact model,fast circuit simulation,design space exploration,FDSOI MRAM hardware data,STT- MRAM,size 22.0 nm
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