Improving the VF-IR Trade-Off in 650-V/1200-V SiC SBD by Development of Schottky Metal and Optimization of Device Structure

A 650-V/10-A-class SiC Schottky barrier diode is demonstrated that has low VF of 1.19 V while limiting IR to 1.6 muA. This outstanding trade-off is realized by developing the Schottky metal and optimizing the junction barrier structure. The fabricated device exhibits superior temperature stability with a small increase in VF under high-temperature operation, although the increase in IR is similar to that of conventional devices. No thermal runaway, or degradation of VF or IR is observed under high-temperature and high-voltage stress. The developed device improves the efficiency of electric energy conversion equipment by 0.1% when used in a power factor correction circuit.