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高功率793 nm半导体激光器

ZHOU Kun,HE Lin-An,LI Yi,HE Yu-Wen,ZHANG Liang,HU Yao, LIU Sheng-Zhe, YANG Xin,DU Wei-Chuan,GAO Song-Xin,TANG Chun

Journal of Infrared and Millimeter Waves（2022）

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Abstract
针对掺铥光纤激光器泵浦源的需求,研制了波长为793 nm的高功率半导体激光芯片和尾纤耦合模块.激光器外延采用了非对称大光腔的波导结构,降低了模式损耗,波导采用无铝的GaInP材料,结合真空解理钝化工艺提高了腔面损伤阈值.通过外延结构和腔面镀膜的优化,研制的激光器单管输出功率达到12 W@11A,在输出功率8 W时通过了300 h老化测试.采用7只单管制备了尾纤耦合模块,耦合至100μm NA.0.22光纤中,输出功率为40 W@7A,电-光效率为49.5％@40 W.
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Key words,semiconductor lasers,793nm,facet reflectivity,longitude spatial hole burning
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