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Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga2O3/p-diamond heterojunction

Wang Lin,Ting-Ting Wang,Qi-Liang Wang,Xian-Yi Lv,Gen-Zhuang Li,Liu-An Li,Jin-Ping Ao,Guang-Tian Zou

Chinese Physics B（2022）

引用 7|浏览4
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关键词
diamond,Schottky barrier diode,junction terminal extension,simulation
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