Эффект самоподдержания проводящего состояния в обратносмещенных GaAs-диодах, переключаемых в режиме задержанного лавинного пробоя

It is experimentally established that high-voltage GaAs diodes maintain conducting state with low residual voltage after switching to the conducting state in the delayed impact-ionization mode. The duration of the constant current in the reversely-biased structure is determined by the duration of the applied rectangular voltage pulse (up to 100 ns) and significantly exceeds drift extraction and recombination times. The discovered effect of self-supporting conducting state resembles the lock-on effect in optically activated GaAs semiconductor switches and S-diodes with deep centers. The effect can be explained by shock ionization in narrow collapsing Gann domains.