TCAD simulation of vertical diamond MISFET based on deep depletion characteristics with high current output capacity

A vertical diamond deep-depletion metal-insulator-semiconductor field-effect transistor (D3MISFET) with specific structural parameters and doping distribution is simulated in this paper. The vertical structure requires only p-type doping and has a lower on-resistance, which greatly improves the output capability of the transistor. The transfer characteristics, output characteristics and off-state breakdown characteristics of the vertical D3MISFET were given. The results show that the vertical D3MISFET has better output capability than the lateral-structure D3MISFET with the contribution of space charge transport limited current, and the output current can reach a high value of 700 mA/mm. An increase in temperature promotes a further increase in the output current of the device. The device switching ratio is greater than 109, and the breakdown voltage is 79 V.