Tunneling leakage in ultrashort-channel MOSFETs—From atomistics to continuum modeling

Raphaël J. Prentki,Mohammed Harb,Chenyi Zhou,Pericles Philippopoulos,Félix Beaudoin,Vincent Michaud-Rioux,Hong Guo

Solid-State Electronics（2022）

引用 2|浏览15

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摘要

•Effective doping of silicon nanowires and nanosheets via bound-charge engineering.•Inhibiting direct source-to-drain tunneling leakage in MOSFETs down to 2.3 nm.•Quantum transport simulations combining atomistic and continuum models.

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关键词

Ultrashort-channel MOSFET,Direct source-to-drain tunneling,Bound-charge engineering,Nonequilibrium Green’s function formalism,Atomistics,Finite-element method

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