Fabrication and Photoelectric Properties of N-V2o5/p-gaas Heterojunction

The n-V2O5/p-GaAs heterojunction was fabricated experimentally and investigated to reveal its optoelectronic and structural properties. Experiments show that the device performance is closely related to the annealing temperature and annealing time during the film preparation, which could profoundly affect the rectification characteristics. To better manifest our perspective, the volt-ampere characteristic curves of the junction were thoroughly investigated under different temperature and illumination conditions. The responsivity of n-V2O5/p-GaAs heterojunction was 0.00517 A/W at 1550 nm, and the detectivity were 1.15 x 10(7) Jones and 4.75 x 10(8) Jones at 0 and 3 V bias. These values were nearly 2-fold higher than those at 1310 nm, whose responsivity was 0.00264 A/W and detectivity remained 5.85 x 10(6) and 2.61 x 10(8) Jones at 0 and 3 V bias, respectively. The results are conducive to the exploration and improvement of near-infrared optoelectronic devices based on V2O5.