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Modeling the frequency response of vertical and lateral Ge-on-Si waveguide photodetectors: Is 3D simulation unavoidable?

Conference on Lasers and Electro-Optics(2022)

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摘要
Using a 3D multiphysics model as a reference, we investigate the achievements and limitations of a simpler 2D drift-diffusion model to reproduce and optimize the electrooptical frequency response of vertical and lateral Ge-on-Si waveguide photodetectors.
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关键词
3d simulation,frequency response,ge-on-si
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