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Probing Low-Frequency Charge Noise in Few-Electron CMOS Quantum Dots

Physical review applied(2023)SCI 2区

Univ Grenoble Alpes

Cited 5|Views45
Abstract
Charge noise is one of the main sources of environmental decoherence for spin qubits in silicon, presenting a major obstacle in the path towards highly scalable and reproducible qubit fabrication. Here we demonstrate in-depth characterization of the charge noise environment experienced by a quantum dot in a CMOS-fabricated silicon nanowire. We probe the charge noise for different quantum dot configurations, finding that it is possible to tune the charge noise over two orders of magnitude, ranging from 1 ueV^2 to 100 ueV^2. In particular, we show that the top interface and the reservoirs are the main sources of charge noise and their effect can be mitigated by controlling the quantum dot extension. Additionally, we demonstrate a novel method for the measurement of the charge noise experienced by a quantum dot in the few electron regime. We measure a comparatively higher charge noise value of 40 ueV^2 at the first electron, and demonstrate that the charge noise is highly dependent on the electron occupancy of the quantum dot.
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Semiconductor Quantum Dots,CMOS Scaling
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要点】:本文深入研究了CMOS工艺制造的硅纳米线中量子点所经历的电荷噪声环境,并提出了一种在少数电子条件下测量电荷噪声的新方法,成功实现了电荷噪声的调控。

方法】:通过改变量子点的配置,研究不同配置下电荷噪声的变化,并识别出顶部界面和储层是电荷噪声的主要来源,通过控制量子点的延伸来减轻其影响。

实验】:在CMOS制造的硅纳米线量子点中,通过特定的测量方法,实验研究了不同电子占据下的电荷噪声,使用的数据集为不同量子点配置下的电荷噪声测量结果,发现第一电子的电荷噪声值为40 ueV^2,并且电荷噪声随电子占据数高度变化。