GaN on Engineered Bulk Si (Gan-on-ebus) Substrate for Monolithic Integration of High-/Low-Side Switches in Bridge Circuits
IEEE transactions on electron devices/IEEE transactions on electron devices（2022）
关键词
Substrates,Silicon,MODFETs,Logic gates,HEMTs,Gallium nitride,Epitaxial growth,Bulk silicon substrate,gallium nitride,half bridge,junction isolation (JI),power integration
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