First Demonstration of Hetero-Epitaxial Ε-Ga2o3 MOSFETs by MOCVD and a F-plasma Surface Doping

Weiqu Chen,Haoxun Luo,Zimin Chen,Yanli Pei,Gang Wang,Xing Lu

APPLIED SURFACE SCIENCE（2022）

Cited 13|Views4

Abstract

This letter reports on the demonstration of epsilon-phase gallium oxide (epsilon-Ga2O3) based metal-oxidesemiconductor field effect transistors (MOSFETs) for the first time. Phase-pure epsilon-Ga2O3 film was hetero-epitaxially grown on a sapphire substrate by metal organic chemical vapor deposition (MOCVD) using a two-step growth method. The high crystalline quality of the epilayer was confirmed with the X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM) investigations. Through a proper surface cleaning and CF4-plasma treatment process, fluorine (F) atoms were incorporated and acted as donors in the epsilon-Ga2O3 film, by which the sheet resistance (R-sh) of the epilayer was decreased by 10(5). Based on this F-plasma doped epsilon-Ga2O3 film, MOSFETs with a maximum output current density exceeding 3 mA/mm were successfully demonstrated. The doping profile extracted from the capacitance-voltage (C-V) measurement showed a significant carrier accumulation near the epsilon-Ga2O3 film surface with a peak concentration of 5 x 10(17) cm(-3) and an integrated carrier density of similar to 6.4 x 10(11) cm(-2). The peak electron effective mobility (mu(eff)) within the MOSFET channel was extracted to be as high as 19 cm(2)/Vs, indicating a great potential of epsilon-Ga2O3 based electronics for future high-speed and high-power applications.

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Key words

epsilon-Ga2O3,CF4 plasma,Inductively coupled plasma,Surface treatment,MOCVD,Hetero-epitaxy,MOSFET

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