AlxInyGa1 – x – yPzAs1 – z/GaAs Graded-Gap Heterostructures for Photovoltaic Converters

We grew AlxInyGa1 – x – yPzAs1 – z/GaAs graded-gap heterostructures by temperature-gradient zone recrystallization with reciprocating motion of the liquid zone, with the band gap varying from 1.43 to 2.2 eV. The effect of technological parameters on the change in the band gap of grown AlxInyGa1 – x – yPzAs1 – z solid solutions is studied. The maximum band-gap gradient of 10  490 eV/cm was achieved in the p-AlxInyGa1 – x – yPzAs1 – z/n-GaAs heterostructure, and the external quantum yield increased in the wavelength range of 500–900 nm.