$1.62\Mu \mathrm{m}$ Global Shutter Quantum Dot Image Sensor Optimized for Near and Shortwave Infrared

J. S. Steckel,E. Josse, A. G. Pattantyus-Abraham,M. Bidaud,B. Mortini, H. Bilgen, O. Arnaud, S. Allegret-Maret, F. Saguin,L. Mazet,S. Lhostis, T. Berger,K. Haxaire,L. L. Chapelon,L. Parmigiani,P. Gouraud,M. Brihoum,P. Bar,M. Guillermet, S. Favreau,R. Duru, J. Fantuz,S. Ricq,D. Ney, I Hammad, D. Roy, A. Arnaud,B. Vianne, G. Nayak, N. Virollet,V Farys,P. Malinge,A. Tournier,F. Lalanne,A. Crocherie,J. Galvier, S. Rabary,O. Noblanc,H. Wehbe-Alause, S. Acharya,A. Singh, J. Meitzner, D. Aher, H. Yang, J. Romero, B. Chen, C. Hsu, K. C. Cheng, Y. Chang, M. Sarmiento, C. Grange, E. Mazaleyrat,K. Rochereau

2021 IEEE International Electron Devices Meeting (IEDM)（2021）

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关键词
platform technology,lead sulfide QD,quantum efficiency,global shutter pixel arrays,pixel pitch,global shutter quantum dot image sensor,near infrared infrared region,shortwave infrared region,light spectrum,colloidal quantum dot thin film technology,QF photodiodes,dark current,wavelength 1.62 mum,PbS
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