Evaluation of dielectric properties of Au/TZO/n–Si structure depending on frequency and voltage

This study examined the dielectric properties of the titanium doped ZnO (TZO) thin film. The TZO thin film was deposited on the n-type Si substrate with the RF sputtering system and the metallization process was completed for electrical characterization. The dielectric parameters such as dielectric constant ( ε ^' ), dielectric loss ( ε ^'' ) dielectric loss tangent ( tanδ ), and ac conductivity ( σ_ac ) of the Au/TZO/n–Si structure were determined using capacitance ( C ) and conductance ( G ) data, obtained from the admittance measurements for 0.3, 0.5 and 1 MHz frequency values at room temperature. According to the experimental results, ε ^' – V and ε ^'' – V curves were indicated an inductive behavior at 1 MHz. In addition, the variation of these dielectric parameters depending on the frequency in specific negative voltage and positive voltage regions were investigated. Experimental results showed that the dielectric parameters of the Au/TZO/n–Si structure are highly frequency dependent.