Cs Adsorption Characteristics on Β-Ga1.9375mg0.0625o3 (100) Surface: the First Principles Calculation Investigation

In order to explore the practicability of beta-Ga1.9375Mg0.0625O3 (100) surface as photoemission material, the structural stability, electronic and optical properties of Cs on beta-Ga1.0975Mg0.0625O3 (100) surface are calculated by the first principles calculation. The adsorption structure is the most stable when Cs atom on the top of Mg atom. It is found that Cs adsorption on beta-Ga1.0975Mg0.0625O3 (100) surface can reduce work function duo to the existence of dipole moment and generate slight band bending. The adsorption edge rapidly increases at 205 nm, which means that Cs/beta-Ga1.9375Mg0.0625O3 (100) surface is a potential optical material at DUV region.