Impact of the Pre Amorphization by Ge Implantation on Ni0.9Pt0.1 Silicide
MICROELECTRONIC ENGINEERING(2022)
摘要
The impact of the Pre Amorphization by Ge Implantation (PAI) on Ni0.9Pt0.1 silicide is studied. Reactions between a 10 nm thick Ni0.9Pt0.1 film and Si (100) substrate are analyzed as a function of the induced amorphous-Si thicknesses. In view of being compatible with the integration constraint of the 28 nm CMOS technologies, the Ge implantation dose is fixed at a low level. The relative position of the amorphous-Si/crystalline-Si interface and the silicide growth front is defined for each sample. Then, in-situ XRD analyses, X-Ray Reflectometry (XRR) and Sheet resistance (Rs) measurements are achieved to provide a deep study of silicide growth kinetics and silicide properties. First, a clear relationship is established between the silicide growth rate and the amorphous-Si thickness. Secondly, an easier NiSi nucleation and a decrease of its resistivity is observed when NiSi nucleates at the theta-Ni2Si/a-Si interface. These observations are discussed considering the impact of the amorphous-Si layer on the driving force, the nucleation barrier, the lateral growth rate, and NiSi roughness.
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关键词
Ni0.9Pt0.1 silicide,PAI,Kinetics,Resistivity
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