High Hole Mobility of Polycrystalline GeSn Layers Grown by Hot‐Wire Chemical Vapor Deposition on Diamond Substrates

Yury N. Buzynin, Vladimir G. Shengurov, Sergei A. Denisov,Pavel A. Yunin, Vadim Yu. Chalkov,Michael N. Drozdov,Sergei A. Korolyov, Alexei V. Nezhdanov

Physica status solidi Rapid research letters（2021）

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diamond substrates,electrophysical parameters,GeSn layers,morphologies,structures

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